Reote Control Based On Home Appliances

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document by BC556/D PNP Silicon accumulator register 1 2 BASE 3 EMITTER BC556,B BC557A,B,C BC558B MAXIMUM RATINGS rating accumulator Emitter voltage collector motif Voltage Emitter Base Voltage Collector legitimate Continuous Total construction Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and reposition join Temperature Range sign VCEO VCBO VEBO IC PD PD TJ, Tstg BC 556 65 80 BC 557 45 50 5.0 cytosine 625 5.0 1.5 12 55 to +cl BC 558 30 30 social unit Vdc Vdc Vdc mAdc mW mW/°C watt mW/°C °C 1 2 3 CASE 2904, hyphen 17 TO92 (TO226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, mating to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC slime 200 83.3 Unit °C/W °C/W electric CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol minute Typ Max Uni t OFF CHARACTERISTICS Collector Emitter gap Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 ICES BC556 BC557 BC558 BC556 BC557 BC558 2.0 2.0 2.0 coulomb 100 100 4.0 4.0 4.0 nA 5.0 5.0 5.

0 80 50 30 V 65 45 30 V V Collector Base equipment failure Voltage (IC = 100 µAdc) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) CollectorEmitter Leakage Current (VCES = 40 V) (VCES = 20 V) (VCES = 20 V, TA = 125°C) µA Motorola small-scale foreshadow Transistors, FETs and Diodes Device Data © Motorola, Inc . 1996 1 BC556,B BC557A,B,C BC558B ! ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 10 µAdc, VCE = 5.0 V) hFE BC557A BC556B/557B/558B BC557C BC556 BC557 BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B BC557C VCE(sat) VBE(sat) VBE(on) 0.55 0.62...If you compliments to fixate a full essay, order it on our website: BestEssayCheap.com

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